发明授权
- 专利标题： Magnetic tunnel junction having coherent tunneling structure
- 专利标题（中）： 具有相干隧道结构的磁隧道结
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申请号： US12501535申请日： 2009-07-13
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公开(公告)号： US08183653B2公开(公告)日： 2012-05-22
- 发明人: Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapazhnikov , Yonghua Chen
- 申请人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapazhnikov , Yonghua Chen
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Mueting, Raasch & Gebhardt PA
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; G11C11/02
摘要：
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
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