发明授权
- 专利标题： Correcting substrate for charged particle beam lithography apparatus
- 专利标题（中）： 用于带电粒子束光刻设备的校正基板
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申请号： US12408212申请日： 2009-03-20
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公开(公告)号： US08183544B2公开(公告)日： 2012-05-22
- 发明人: Kaoru Tsuruta , Takashi Kamikubo , Rieko Nishimura , Shusuke Yoshitake , Shuichi Tamamushi
- 申请人： Kaoru Tsuruta , Takashi Kamikubo , Rieko Nishimura , Shusuke Yoshitake , Shuichi Tamamushi
- 申请人地址： JP Numazu-shi
- 专利权人： NuFlare Technology, Inc.
- 当前专利权人： NuFlare Technology, Inc.
- 当前专利权人地址： JP Numazu-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-073538 20080321
- 主分类号： A61N5/00
- IPC分类号： A61N5/00
摘要：
A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.
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