发明授权
US08178373B2 Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
有权
金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件
- 专利标题： Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
- 专利标题（中）： 金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件
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申请号： US12914906申请日： 2010-10-28
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公开(公告)号： US08178373B2公开(公告)日： 2012-05-15
- 发明人: Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- 申请人地址： US CA Oakland JP Saitama Prefecture
- 专利权人： The Regents of the University of California,Japan Science and Technology Agency
- 当前专利权人： The Regents of the University of California,Japan Science and Technology Agency
- 当前专利权人地址： US CA Oakland JP Saitama Prefecture
- 代理机构： Gates & Cooper LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L33/00
摘要：
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
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