发明授权
- 专利标题: Hidden plating traces
- 专利标题(中): 隐藏电镀痕迹
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申请号: US12493582申请日: 2009-06-29
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公开(公告)号: US08129272B2公开(公告)日: 2012-03-06
- 发明人: Hem Takiar , Cheeman Yu , Ken Jian Ming Wang , Chin-Tien Chiu , Han-Shiao Chen , Chih-Chin Liao
- 申请人: Hem Takiar , Cheeman Yu , Ken Jian Ming Wang , Chin-Tien Chiu , Han-Shiao Chen , Chih-Chin Liao
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies Inc.
- 当前专利权人: SanDisk Technologies Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Vierra Magen Marcus & DeNiro LLP
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A strengthened semiconductor die substrate and package are disclosed. The substrate may include contact fingers formed with nonlinear edges. Providing a nonlinear contour to the contact finger edges reduces the mechanical stress exerted on the semiconductor die which would otherwise occur with straight edges to the contact fingers. The substrate may additionally or alternatively include plating traces extending at an angle from the contact fingers. Extending at an angle, at least the ends of the plating traces at the edge of the substrate are covered beneath a lid in which the semiconductor package is encased. Thus, when in use with a host device, contact between the ends of the plating traces beneath the lid and contact pins of the host device is avoided.
公开/授权文献
- US20090263969A1 HIDDEN PLATING TRACES 公开/授权日:2009-10-22
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