Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
-
Application No.: US12559931Application Date: 2009-09-15
-
Publication No.: US08120942B2Publication Date: 2012-02-21
- Inventor: Takeshi Yamaguchi , Mariko Hayashi , Hirofumi Inoue , Takeshi Araki , Koichi Kubo
- Applicant: Takeshi Yamaguchi , Mariko Hayashi , Hirofumi Inoue , Takeshi Araki , Koichi Kubo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-69930 20090323
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A memory array includes a memory cell, the memory cell being disposed between a first line and a second line and being configured by a variable resistor and a rectifier connected in series. The variable resistor is a mixture of silicon oxide (SiO2) and a transition metal oxide, a proportion of the transition metal oxide being set to 55˜80%.
Public/Granted literature
- US20100238702A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2010-09-23
Information query
