The amorphous carbon film of the present invention is an amorphous carbon film comprising carbon and hydrogen, wherein the amorphous carbon film contains not more than 30 atomic % (excluding 0%) of hydrogen and, when the entire amount of the carbon is taken as 100 atomic %, carbon having an sp2 hybrid orbital is present in an amount of not less than 70 atomic % and less than 100 atomic %. Conductivity is imparted to an amorphous carbon film by controlling the contents of hydrogen, Csp3 and the like to increase a structure comprising Csp2. This amorphous carbon film can be formed by plasma CVD using a reaction gas containing one or more gases selected from a carbocyclic compound gas containing carbon having an sp2 hybrid orbital, and a heterocyclic compound gas containing carbon having an sp2 hybrid orbital and silicon and/or nitrogen. By forming the amorphous carbon film on a surface of a substrate, a conductive member can be obtained.