Invention Grant
- Patent Title: Formation of a tantalum-nitride layer
- Patent Title (中): 形成氮化钽层
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Application No.: US12846253Application Date: 2010-07-29
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Publication No.: US08114789B2Publication Date: 2012-02-14
- Inventor: Sean M. Seutter , Michael X. Yang , Ming Xi
- Applicant: Sean M. Seutter , Michael X. Yang , Ming Xi
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H01L21/469
- IPC: H01L21/469

Abstract:
A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.
Public/Granted literature
- US20100311237A1 FORMATION OF A TANTALUM-NITRIDE LAYER Public/Granted day:2010-12-09
Information query
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