Invention Grant
- Patent Title: Electrically programmable diffusion fuse
- Patent Title (中): 电子可编程扩散保险丝
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Application No.: US12488179Application Date: 2009-06-19
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Publication No.: US08102019B1Publication Date: 2012-01-24
- Inventor: Serhii Tumakha , Boon Y. Ang , Amit Ghia , Jan L. de Jong
- Applicant: Serhii Tumakha , Boon Y. Ang , Amit Ghia , Jan L. de Jong
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent Kevin T. Cuenot
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L27/10 ; H01L23/525 ; H01L21/768 ; H01L21/336 ; H01L21/82
Abstract:
A fuse structure for a semiconductor integrated circuit (IC) includes an anode comprising conductive material overlaying a diffusion material disposed within a substrate layer of the IC, wherein the diffusion material is electrically isolated from the substrate layer by at least one p-n junction. The fuse structure can include a cathode comprising conductive material overlaying the diffusion material. The fuse structure further can include a fuse link comprising conductive material overlaying the diffusion material, wherein a first end of the fuse link couples to the anode and a second end of the fuse link, that is distal to the first end, couples to the cathode.
Information query
IPC分类:
