Invention Grant
- Patent Title: Nonplanar faceplate for a plasma processing chamber
- Patent Title (中): 用于等离子体处理室的非平面面板
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Application No.: US12110879Application Date: 2008-04-28
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Publication No.: US08097082B2Publication Date: 2012-01-17
- Inventor: Jianhua Zhou , Deenesh Padhi , Karthik Janakiraman , Hang Yu , Siu F. Cheng , Yoganand Saripalli , Tersem Summan
- Applicant: Jianhua Zhou , Deenesh Padhi , Karthik Janakiraman , Hang Yu , Siu F. Cheng , Yoganand Saripalli , Tersem Summan
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: C23C16/50
- IPC: C23C16/50
Abstract:
A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive plate and the electrode by varying a distance between the conductive plate and the electrode.
Public/Granted literature
- US20090269512A1 NONPLANAR FACEPLATE FOR A PLASMA PROCESSING CHAMBER Public/Granted day:2009-10-29
Information query
IPC分类:
