Invention Grant
- Patent Title: Testkey design pattern for gate oxide
- Patent Title (中): 栅极氧化物的测试键设计模式
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Application No.: US11675635Application Date: 2007-02-16
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Publication No.: US08084769B2Publication Date: 2011-12-27
- Inventor: Shyh-Fann Ting , Sheng-Hao Lin , Chien-Hsing Lee , Da-Ching Chiou , Sun-Chin Wei , Min-Yi Chang , Cheng-Tung Huang , Tung-Hsing Lee , Tzyy-Ming Cheng
- Applicant: Shyh-Fann Ting , Sheng-Hao Lin , Chien-Hsing Lee , Da-Ching Chiou , Sun-Chin Wei , Min-Yi Chang , Cheng-Tung Huang , Tung-Hsing Lee , Tzyy-Ming Cheng
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/66

Abstract:
A testkey design pattern includes a least one conductive contact, at least one conductive line of a first width vertically and electrically connected to the conductive contact, and at least one pair of source and drain respectively directly connected to each side of the conductive line. The pair of source and drain and part of the conductive line of a first length directly connected to the source and drain form an electronic device. The testkey design patterns are advantageous in measuring capacitance with less error and for better gate oxide thickness extraction.
Public/Granted literature
- US20080197351A1 TESTKEY DESIGN PATTERN FOR GATE OXIDE Public/Granted day:2008-08-21
Information query
IPC分类: