Invention Grant
US08039385B1 IC devices having TSVS including protruding tips having IMC blocking tip ends
有权
具有TSVS的IC器件包括具有IMC阻塞末端的突出尖端
- Patent Title: IC devices having TSVS including protruding tips having IMC blocking tip ends
- Patent Title (中): 具有TSVS的IC器件包括具有IMC阻塞末端的突出尖端
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Application No.: US12880629Application Date: 2010-09-13
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Publication No.: US08039385B1Publication Date: 2011-10-18
- Inventor: Jeffrey A. West , Young-Joon Park
- Applicant: Jeffrey A. West , Young-Joon Park
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yingsheng Tung; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/4763
Abstract:
A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve and an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to the protruding TSV tips is on a portion of the sidewalls of the protruding TSV tips. The passivation layers is absent from a distal portion of the protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends including a first metal layer including a first metal other than solder and a second metal layer including a second metal other than solder that covers the exposed tip portion. The bulbous distal tip ends cover a portion of the TSV sidewalls and are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ≧25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.
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