Invention Grant
US08004082B2 Electronic component formed with barrier-seed layer on base material
有权
在基材上形成有阻挡种子层的电子部件
- Patent Title: Electronic component formed with barrier-seed layer on base material
- Patent Title (中): 在基材上形成有阻挡种子层的电子部件
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Application No.: US12449128Application Date: 2009-02-19
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Publication No.: US08004082B2Publication Date: 2011-08-23
- Inventor: Junnosuke Sekiguchi , Toru Imori
- Applicant: Junnosuke Sekiguchi , Toru Imori
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: Nippon Mining & Metals Co., Ltd.
- Current Assignee: Nippon Mining & Metals Co., Ltd.
- Current Assignee Address: JP Minato-ku, Tokyo
- Agency: Flynn, Thiel, Boutell & Tanis, P.C.
- Priority: JP2008-070855 20080319
- International Application: PCT/JP2009/052916 WO 20090219
- International Announcement: WO2009/116346 WO 20090924
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
It is an object of the present invention to provide a technology for forming an ULSI fine copper wiring by a simpler method. An electronic component in which a thin alloy film of tungsten and a noble metal used as a barrier-seed layer for an ULSI fine copper wiring is formed on a base material, wherein the thin alloy film has a composition comprising tungsten at a ratio equal to or greater than 60 at. % and the noble metal at a ratio of equal to or greater than 5 at. % and equal to or less than 40 at. %. The noble metal is preferably one or more kinds of metals selected from the group consisting of platinum, gold, silver and palladium.
Public/Granted literature
- US20110006426A1 ELECTRONIC COMPONENT FORMED WITH BARRIER-SEED LAYER ON BASE MATERIAL Public/Granted day:2011-01-13
Information query
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