Invention Grant
- Patent Title: Structures for resistive random access memory cells
- Patent Title (中): 电阻随机存取存储单元的结构
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Application No.: US12835791Application Date: 2010-07-14
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Publication No.: US08000128B2Publication Date: 2011-08-16
- Inventor: Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
- Applicant: Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Campbell Nelson Whipps LLC
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
Public/Granted literature
- US20100277969A1 STRUCTURES FOR RESISTIVE RANDOM ACCESS MEMORY CELLS Public/Granted day:2010-11-04
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