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发明授权
US07977680B2 Semiconductor device having thin film transistors on a metal substrate 有权
在金属基板上具有薄膜晶体管的半导体器件

Semiconductor device having thin film transistors on a metal substrate
摘要：
In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.
摘要（中）：

在具有金属表面的基板的半导体器件中，形成在具有金属表面的基板上的绝缘膜和形成在绝缘膜上的像素单元; 像素单元包括TFT和与TFT连接的布线，并且存储电容器由具有金属表面的基板（11），绝缘膜（12）和布线（21）构成。 由于绝缘膜更薄，并且随着绝缘膜和布线接触的区域的面积较大，所以存储电容器具有较大的容量。

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