Invention Grant
US07957217B2 Method of controlling internal voltage and multi-chip package memory prepared using the same
有权
控制内部电压的方法和使用其制备的多芯片封装存储器
- Patent Title: Method of controlling internal voltage and multi-chip package memory prepared using the same
- Patent Title (中): 控制内部电压的方法和使用其制备的多芯片封装存储器
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Application No.: US12266716Application Date: 2008-11-07
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Publication No.: US07957217B2Publication Date: 2011-06-07
- Inventor: Moon-sook Park , Hoe-ju Chung , Jung-bae Lee
- Applicant: Moon-sook Park , Hoe-ju Chung , Jung-bae Lee
- Applicant Address: KR Suwon-si, Gyeonggi
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0114292 20071109
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
The invention relates generally to a multi-chip package (MCP) memory device, and more particularly, but without limitation, to a MCP memory device having a reduced size. In one embodiment, the MCP memory device includes: a transfer memory chip; and a plurality of memory chips coupled to the transfer memory chip, each of the plurality of memory chips including an internal voltage generating circuit, the transfer memory chip configured to receive a plurality of command signals from outside the MCP memory device, the transfer memory chip further configured to output a plurality of control signals to the plurality of memory chips based on the plurality of command signals. Embodiments of the invention also relate to a method of controlling an internal voltage of the MCP memory device.
Public/Granted literature
- US20090125687A1 METHOD OF CONTROLLING INTERNAL VOLTAGE AND MULTI-CHIP PACKAGE MEMORY PREPARED USING THE SAME Public/Granted day:2009-05-14
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