发明授权
- 专利标题： Edge termination with improved breakdown voltage
- 专利标题（中）： 边缘端接，具有改善的击穿电压
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申请号： US12367716申请日： 2009-02-09
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公开(公告)号： US07923804B2公开(公告)日： 2011-04-12
- 发明人: Jun Zeng , Mohamed N. Darwish , Shih-Tzung Su
- 申请人： Jun Zeng , Mohamed N. Darwish , Shih-Tzung Su
- 申请人地址： US CA Santa Clara
- 专利权人： MaxPower Semiconductor Inc.
- 当前专利权人： MaxPower Semiconductor Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Storm LLP
- 代理商 Robert O. Groover, III
- 主分类号： H01L27/095
- IPC分类号： H01L27/095 ; H01L29/47 ; H01L29/812 ; H01L31/07 ; H01L31/108
摘要：
A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
公开/授权文献
- US20090206913A1 Edge Termination with Improved Breakdown Voltage 公开/授权日：2009-08-20
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