发明授权
US07923684B2 Methods, systems and computer program products for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles
有权
使用扫描电子显微镜图像和二次电子信号轮廓测量精细图案的关键尺寸的方法,系统和计算机程序产品
- 专利标题: Methods, systems and computer program products for measuring critical dimensions of fine patterns using scanning electron microscope pictures and secondary electron signal profiles
- 专利标题(中): 使用扫描电子显微镜图像和二次电子信号轮廓测量精细图案的关键尺寸的方法,系统和计算机程序产品
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申请号: US12274471申请日: 2008-11-20
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公开(公告)号: US07923684B2公开(公告)日: 2011-04-12
- 发明人: Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
- 申请人: Min-Sub Kang , Sang-Kil Lee , Kwang-Sik Kim , Kyung-Ho Jung , Sung-Joong Kim
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, PA
- 优先权: KR2003-0090187 20031211
- 主分类号: H01J37/28
- IPC分类号: H01J37/28
摘要:
A pattern is inspected by acquiring a scanning electron microscope picture of an inspection pattern, and acquiring a scanning electron microscope secondary electron signal profile of the inspection pattern. A determination is made as to whether the inspection pattern is defective by comparing the scanning electron microscope picture of the inspection pattern to a scanning electron microscope picture of a sample pattern, and by comparing the scanning electron microscope secondary electron signal profile of the inspection pattern to a scanning electron microscope secondary electron signal profile of a sample pattern.
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