发明授权
- 专利标题： Scalable magnetic random access memory device
- 专利标题（中）： 可扩展磁性随机存取存储器件
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申请号： US12119297申请日： 2008-05-12
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公开(公告)号： US07894247B2公开(公告)日： 2011-02-22
- 发明人: Daniel C. Worledge
- 申请人： Daniel C. Worledge
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Michael J. Chang, LLC
- 代理商 Vazken Alexanian
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A magnetic memory cell is provided. The magnetic memory cell includes at least one fixed magnetic layer and a plurality of free magnetic layers, separated from the at least one fixed magnetic layer by at least one barrier layer. The free magnetic layers include a first free magnetic layer adjacent to the barrier layer, a second free magnetic layer separated from the first free magnetic layer by at least one spacer layer, and a third free magnetic layer separated from the second free magnetic layer by at least one anti-parallel coupling layer. A magnetic moment of the first free magnetic layer is greater than both a magnetic moment of the second free magnetic layer and a magnetic moment of the third free magnetic layer. The magnetic memory cell may be used in conjunction with a magnetic random access memory device.
公开/授权文献
- US20080212365A1 Scalable Magnetic Random Access Memory Device 公开/授权日：2008-09-04
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