发明授权
- 专利标题： Integrated nitride and silicon carbide-based devices
- 专利标题（中）： 集成氮化物和碳化硅基器件
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申请号： US11410768申请日： 2006-04-25
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公开(公告)号： US07875910B2公开(公告)日： 2011-01-25
- 发明人: Scott T. Sheppard , Adam William Saxler , Thomas Smith
- 申请人： Scott T. Sheppard , Adam William Saxler , Thomas Smith
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel Sibley & Sajovec
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L21/338
摘要：
A monolithic electronic device includes a first nitride epitaxial structure including a plurality of nitride epitaxial layers. The plurality of nitride epitaxial layers include at least one common nitride epitaxial layer. A second nitride epitaxial structure is on the common nitride epitaxial layer of the first nitride epitaxial structure. A first plurality of electrical contacts is on the first epitaxial nitride structure and defines a first electronic device in the first nitride epitaxial structure. A second plurality of electrical contacts is on the first epitaxial nitride structure and defines a second electronic device in the second nitride epitaxial structure. A monolithic electronic device includes a bulk semi-insulating silicon carbide substrate having implanted source and drain regions and an implanted channel region between the source and drain regions, and a nitride epitaxial structure on the surface of the silicon carbide substrate. Corresponding methods are also disclosed.
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