Method of forming CMOS transistor

Invention Grant

US07875520B2 Method of forming CMOS transistor 有权

Title translation: CMOS晶体管的形成方法

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Patent Title: Method of forming CMOS transistor
Patent Title (中): CMOS晶体管的形成方法
Application No.: US12056277

Application Date: 2008-03-27
Publication No.: US07875520B2

Publication Date: 2011-01-25
Inventor: Meng-Yi Wu , Cheng-Tung Huang , Wen-Han Hung , Shyh-Fann Ting , Kun-Hsien Lee , Li-Shian Jeng , Shih-Jung Tu , Yu-Ming Lin , Yao-Chin Cheng
Applicant: Meng-Yi Wu , Cheng-Tung Huang , Wen-Han Hung , Shyh-Fann Ting , Kun-Hsien Lee , Li-Shian Jeng , Shih-Jung Tu , Yu-Ming Lin , Yao-Chin Cheng
Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
Assignee: United Microelectronics Corp.
Current Assignee: United Microelectronics Corp.
Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
Agent Winston Hsu; Scott Margo
Main IPC: H01L21/336
IPC: H01L21/336

Abstract:

A method of forming CMOS transistor is disclosed. A CMOS transistor having a first active area and a second active area is provided. In order to maintain the concentration of the dopants in the second active area, according to the method of the present invention an ion implantation process is performed to form a lightly doped drain (LDD) in the second active area after an epitaxial layer is formed in the first active area. On the other hand, the ion implantation process is performed to form the respective LDD of the first active area and the second active area. After the epitaxial layer in the first active area is formed, another ion implantation process is performed to implant dopants into the LDD of the second active area again.

Abstract(Chinese):

公开了一种形成CMOS晶体管的方法。提供具有第一有源区和第二有源区的CMOS晶体管。为了保持第二有源区中的掺杂剂的浓度，根据本发明的方法，在形成外延层之后，在第二有源区中进行离子注入工艺以形成轻掺杂漏极（LDD）第一个活跃区域。另一方面，进行离子注入处理，以形成第一有源区和第二有源区的相应LDD。在形成第一有源区中的外延层之后，再次执行另一种离子注入工艺以将掺杂剂注入到第二有源区的LDD中。

Public/Granted literature

US20090246922A1 METHOD OF FORMING CMOS TRANSISTOR Public/Granted day:2009-10-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的