发明授权
- 专利标题： Magnetic memory device and write/read method of the same
- 专利标题（中）： 磁存储器件和写/读方法相同
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申请号： US11672261申请日： 2007-02-07
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公开(公告)号： US07859881B2公开(公告)日： 2010-12-28
- 发明人: Yoshihisa Iwata , Katsuyuki Fujita , Yuui Shimizu
- 申请人： Yoshihisa Iwata , Katsuyuki Fujita , Yuui Shimizu
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-272039 20061003
- 主分类号： G11C19/00
- IPC分类号： G11C19/00
摘要：
A magnetic memory device includes a first magnetic line which has a plurality of cells made of magnetic domains partitioned by domain walls, and in which information is recorded in each cell, a first write element formed at one end portion of the first magnetic line, and a first read element formed at the other end portion of the first magnetic line.
公开/授权文献
- US20080080234A1 MAGNETIC MEMORY DEVICE AND WRITE/READ METHOD OF THE SAME 公开/授权日：2008-04-03
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