发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US12624117申请日： 2009-11-23
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公开(公告)号： US07859096B2公开(公告)日： 2010-12-28
- 发明人: Masanori Onodera , Kouichi Meguro , Junji Tanaka
- 申请人： Masanori Onodera , Kouichi Meguro , Junji Tanaka
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion, LLC
- 当前专利权人： Spansion, LLC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The present invention provides a semiconductor device and a fabrication method therefor, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefor, in which downsizing and cost reduction can be realized.
公开/授权文献
- US20100102424A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR 公开/授权日：2010-04-29
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