发明授权
US07839903B2 Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
有权
非极性和半极性（Ga，Al，In，B）N二极管激光器的激光棒取向优化
- 专利标题： Optimization of laser bar orientation for nonpolar and semipolar (Ga,Al,In,B)N diode lasers
- 专利标题（中）： 非极性和半极性（Ga，Al，In，B）N二极管激光器的激光棒取向优化
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申请号： US12030124申请日： 2008-02-12
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公开(公告)号： US07839903B2公开(公告)日： 2010-11-23
- 发明人: Robert M. Farrell , Mathew C. Schmidt , Kwang-Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人： Robert M. Farrell , Mathew C. Schmidt , Kwang-Choong Kim , Hisashi Masui , Daniel F. Feezell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人地址： US CA Oakland JP Kawaguchi, Saitama Prefecture
- 专利权人： The Regents of the University of California,Japan Science and Technology Agency
- 当前专利权人： The Regents of the University of California,Japan Science and Technology Agency
- 当前专利权人地址： US CA Oakland JP Kawaguchi, Saitama Prefecture
- 代理机构： Gates & Cooper LLP
- 主分类号： H01S3/10
- IPC分类号： H01S3/10
摘要：
Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
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