发明授权
US07838897B2 Light-emitting device and method for manufacturing the same 有权
发光装置及其制造方法

Light-emitting device and method for manufacturing the same
摘要:
The invention provides a light-emitting device 10 including a light-emitting element 12 and a substrate 11 where the light-emitting element 12 is arranged, characterized in that a housing part 28 housing the light-emitting element 12 and having a shape that is tapered upward from the substrate 11 and a metal frame 15 surrounding the light-emitting element 12 and including the side face 28A of the housing part 28 made into a almost mirror-polished surface are provided on the substrate 11.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/02 .按其半导体本体的特征区分的
H01L29/12 ..按其构成材料的特征区分的
H01L29/26 ...除掺杂材料或其他杂质外,包括有包含在H01L29/16,H01L29/18,H01L29/20,H01L29/22,H01L29/24各组中两组或更多个组内的元素的
H01L29/267 ....在不同半导体区域中的
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