A method for manufacturing a solid element device, which comprises providing a glass-containing Al2O3 substrate (3) having a GaN based LED element (2) placed thereon, setting a P2O5—ZnO based low melting point glass in parallel with the substrate, and carrying out a press working at a temperature of 415° C. or higher under a pressure of 60 kgf in a nitrogen atmosphere. Under these conditions, the low melting point glass has a viscosity of 109 poise, and is adhered via an oxide formed on the surface of the glass-containing Al2O3 substrate (3). A solid element device manufactured by the above method can be manufactured through a glass sealing working at a low temperature and also has a highly reliable sealing structure.