Invention Grant
US07791923B2 Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element
有权
多状态电阻存储元件，多位电阻存储单元，其操作方法和使用存储元件的数据处理系统
- Patent Title: Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element
- Patent Title (中): 多状态电阻存储元件，多位电阻存储单元，其操作方法和使用存储元件的数据处理系统
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Application No.: US11619522Application Date: 2007-01-03
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Publication No.: US07791923B2Publication Date: 2010-09-07
- Inventor: In-Gyu Baek , Dong-Chul Kim , Jang-Eun Lee , Myoung-Jae Lee , Sun-Ae Seo , Hyeong-Jun Kim , Seung-Eon Ahn , Eun-Kyung Yim
- Applicant: In-Gyu Baek , Dong-Chul Kim , Jang-Eun Lee , Myoung-Jae Lee , Sun-Ae Seo , Hyeong-Jun Kim , Seung-Eon Ahn , Eun-Kyung Yim
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2006-0002300 20060109
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A multi-bit memory cell stores information corresponding to a high resistive state and multiple other resistive states lower than the high resistive state. A resistance of a memory element within the multi-bit memory cell switches from the high resistive state to one of the other multiple resistive states by applying a corresponding current to the memory element.
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