Invention Grant
- Patent Title: Electrical parameter extraction for integrated circuit design
- Patent Title (中): 集成电路设计电参数提取
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Application No.: US12016661Application Date: 2008-01-18
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Publication No.: US07783999B2Publication Date: 2010-08-24
- Inventor: Tsong-Hua Ou , Ying-Chou Cheng , Chia-Chi Lin , Ru-Gun Liu , Chih-Ming Lai , Min-Hong Wu , Yih-Yuh Doong , Cliff Hou , Yao-Ching Ku
- Applicant: Tsong-Hua Ou , Ying-Chou Cheng , Chia-Chi Lin , Ru-Gun Liu , Chih-Ming Lai , Min-Hong Wu , Yih-Yuh Doong , Cliff Hou , Yao-Ching Ku
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A system, method, and computer readable medium for generating a parameterized and characterized pattern library for use in extracting parasitics from an integrated circuit design is provided. In an embodiment, a layout of an interconnect pattern is provided. A process simulation may be performed on the interconnect pattern. In a further embodiment, the interconnect pattern is dissected into a plurality of segments taking into account OPC rules. A parasitic resistance and/or parasitic capacitance associated with the interconnect pattern may be determined by a physical model and/or field solver.
Public/Granted literature
- US20090187866A1 Electrical Parameter Extraction for Integrated Circuit Design Public/Granted day:2009-07-23
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