发明授权
- 专利标题： Laser irradiation apparatus and laser irradiation method
- 专利标题（中）： 激光照射装置和激光照射方法
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申请号： US10586048申请日： 2005-07-28
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公开(公告)号： US07772523B2公开(公告)日： 2010-08-10
- 发明人: Koichiro Tanaka , Yoshiaki Yamamoto , Takatsugu Omata
- 申请人： Koichiro Tanaka , Yoshiaki Yamamoto , Takatsugu Omata
- 申请人地址： unknown Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd
- 当前专利权人地址： unknown Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2004-224676 20040730
- 国际申请： PCT/JP2005/014264 WO 20050728
- 国际公布： WO2006/011671 WO 20060202
- 主分类号： B23K26/08
- IPC分类号： B23K26/08 ; B23K26/06
摘要：
It is an object of the present invention to provide a laser irradiation apparatus and a laser irradiation method for conducting a laser process homogeneously to the whole surface of a semiconductor film. A first laser beam emitted from a first laser oscillator passes through a slit and a condensing lens and then enters an irradiation surface. At the same time, a second laser beam emitted from a second laser oscillator is delivered so as to overlap the first laser beam on the irradiation surface. Further, the laser beams are scanned relative to the irradiation surface to anneal the irradiation surface homogeneously.
公开/授权文献
- US20070158315A1 Laser irradiation apparatus and laser irradiation method 公开/授权日：2007-07-12
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