发明授权
- 专利标题: Determining leakage in matrix-structured electronic devices
- 专利标题(中): 确定矩阵结构的电子设备中的泄漏
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申请号: US11645971申请日: 2006-12-26
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公开(公告)号: US07710365B2公开(公告)日: 2010-05-04
- 发明人: Franky So , Florian Pschenitzka , Egbert Hoefling
- 申请人: Franky So , Florian Pschenitzka , Egbert Hoefling
- 申请人地址: DE Regensburg
- 专利权人: Osram Opto Semiconductors GmbH
- 当前专利权人: Osram Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 代理机构: Cohen Pontani Lieberman & Pavane LLP
- 主分类号: G09G3/30
- IPC分类号: G09G3/30
摘要:
One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.
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