发明授权
- 专利标题： Method for passivating gate dielectric films
- 专利标题（中）： 钝化栅介质膜的方法
-
申请号： US11745862申请日： 2007-05-08
-
公开(公告)号： US07667247B2公开(公告)日： 2010-02-23
- 发明人: Ching-Ya Wang , Wen-Chin Lee , Denny Tang
- 申请人： Ching-Ya Wang , Wen-Chin Lee , Denny Tang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L31/112
摘要：
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate, forming a dielectric layer over the semiconductor substrate, treating the dielectric layer with a carbon containing group, forming a conductive layer over the treated dielectric layer, and patterning and etching the dielectric layer and conductive layer to form a gate structure. The carbon containing group includes an OCH3 or CN species.
公开/授权文献
- US20080242071A1 METHOD FOR PASSIVATING GATE DIELECTRIC FILMS 公开/授权日：2008-10-02
信息查询
IPC分类:
