Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11898958Application Date: 2007-09-18
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Publication No.: US07656010B2Publication Date: 2010-02-02
- Inventor: Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
- Applicant: Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-253920 20060920
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
Public/Granted literature
- US20080067546A1 Semiconductor device Public/Granted day:2008-03-20
Information query
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