发明授权
US07644389B2 Method for producing a mask for the lithographic projection of a pattern onto a substrate
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用于制造用于将图案的光刻投影到基板上的掩模的方法
- 专利标题: Method for producing a mask for the lithographic projection of a pattern onto a substrate
- 专利标题(中): 用于制造用于将图案的光刻投影到基板上的掩模的方法
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申请号: US11668565申请日: 2007-01-30
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公开(公告)号: US07644389B2公开(公告)日: 2010-01-05
- 发明人: Mario Hennig , Rainer Pforr , Gerd Unger
- 申请人: Mario Hennig , Rainer Pforr , Gerd Unger
- 申请人地址: DE Munich
- 专利权人: Qimonda AG
- 当前专利权人: Qimonda AG
- 当前专利权人地址: DE Munich
- 代理机构: Edell, Shapiro & Finnan, LLC
- 优先权: DE102006004230 20060130
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; G03F1/00 ; G03C5/00
摘要:
A layout is decomposed into partial patterns. An intermediate mask is drawn for each of the partial patterns. The intermediate masks are used in a mask stepper or scanner progressively for projection again into a common pattern on a test mask. A line width distribution LB(x,y) is determined from the test mask or from a test wafer exposed using the mask, and is converted into a distribution of dose corrections. The transmission T(x,y) of the respective intermediate masks is adapted based upon the calculated dose correction. This can be achieved using additional optical elements which are assigned to the intermediate masks and have shading structure elements, or by laser-induced rear-side introduction of shading elements in the quartz substrate of the intermediate masks themselves.
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