Invention Grant
US07635879B2 InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors
失效
InAlAsSb / InGaSb和InAlPSb / InGaSb异质结双极晶体管
- Patent Title: InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors
- Patent Title (中): InAlAsSb / InGaSb和InAlPSb / InGaSb异质结双极晶体管
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Application No.: US11239438Application Date: 2005-09-20
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Publication No.: US07635879B2Publication Date: 2009-12-22
- Inventor: John Bradley Boos , Brian R. Bennett , Paul Campbell , Richard Magno
- Applicant: John Bradley Boos , Brian R. Bennett , Paul Campbell , Richard Magno
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agent John Karasek; Stephen T. Hunnius
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
This invention pertains to heterojunction bipolar transistors containing a semiconductor substrate, a buffer layer of an antimony-based material deposited on the substrate, a sub-collector layer of an antimony-based material deposited on the buffer layer, a collector layer of an antimony-based material deposited on the sub-collector layer, a base layer of an antimony-based material deposited on the collector layer, an emitter layer of an antimony-based material deposited on the base layer, and a cap layer of an antimony-based material deposited on the emitter layer.
Public/Granted literature
- US20060065952A1 InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors Public/Granted day:2006-03-30
Information query
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