发明授权
- 专利标题: Exposure processing system, exposure processing method and method for manufacturing a semiconductor device
- 专利标题(中): 曝光处理系统,曝光处理方法以及半导体装置的制造方法
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申请号: US11024322申请日: 2004-12-29
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公开(公告)号: US07630052B2公开(公告)日: 2009-12-08
- 发明人: Takuya Kono , Nobuhiro Komine , Tatsuhiko Higashiki , Shoichi Harakawa , Makato Ikeda
- 申请人: Takuya Kono , Nobuhiro Komine , Tatsuhiko Higashiki , Shoichi Harakawa , Makato Ikeda
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2004-000515 20040105
- 主分类号: G03B27/32
- IPC分类号: G03B27/32 ; G03B27/54 ; G03D5/00 ; G03C5/00 ; H01L21/00
摘要:
An exposure processing system comprises an exposure apparatus to expose a resist on a wafer, a heating apparatus comprising heating apparatus units, the heating apparatus heating the exposed resist by a heating apparatus unit in the heating apparatus units, a developing apparatus comprising developing apparatus units, the developing apparatus developing the exposed and heated resist by a developing apparatus unit in the developing apparatus units, and a control apparatus to control the exposure apparatus by using correction data so that a wafer on process object being exposed, the correction data being data for correcting a dimensional dispersion of a resist pattern caused by a pair of heating apparatus unit and developing apparatus unit used for the wafer on the process object, the pair of heating and developing apparatus unit comprising a heating and developing apparatus unit in the heating and developing apparatus used for the wafer on the process object.
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