发明授权
- 专利标题： Semiconductor device with recessed channel
- 专利标题（中）： 带凹槽的半导体器件
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申请号： US11649752申请日： 2007-01-05
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公开(公告)号： US07602013B2公开(公告)日： 2009-10-13
- 发明人: Kiyotaka Miyano , Ichiro Mizushima , Kouji Matsuo
- 申请人： Kiyotaka Miyano , Ichiro Mizushima , Kouji Matsuo
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JPP2006-107385 20060410
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes: a layer provided on or above a semiconductor substrate, having an opening, and containing Si and Ge; and a gate provided at a position corresponding to the opening. It is possible to provide a semiconductor device and a manufacturing method of the same which realize easy control of a recess amount and reduction in damage at the time of the recessing.
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