A hermetic interconnect is fabricated on a substrate by forming a stud of conductive material over a metallization layer, and then overcoating the stud of conductive material and the metallization layer with a layer of compliant dielectric material. In one embodiment, the layer of compliant dielectric material is low Young's modulus silicon dioxide, formed by sputter-deposition at low temperature, in a low pressure argon atmosphere. The interconnect may provide electrical access to a micromechanical device, which is enclosed with a capping wafer hermetically sealed to the substrate with an AuInx alloy bond.