Invention Grant
- Patent Title: Stacked structures and methods of fabricating stacked structures
- Patent Title (中): 堆叠结构和制造堆叠结构的方法
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Application No.: US11539814Application Date: 2006-10-09
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Publication No.: US07514775B2Publication Date: 2009-04-07
- Inventor: Clinton Chao , Tsorng-Dih Yuan , Hsin-Yu Pan , Kim Chen , Mark Shane Peng , Tjandra Winata Karta
- Applicant: Clinton Chao , Tsorng-Dih Yuan , Hsin-Yu Pan , Kim Chen , Mark Shane Peng , Tjandra Winata Karta
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/498
- IPC: H01L23/498

Abstract:
A stacked structure includes a first die coupled to a first substrate and having a first conductive structure formed through the first die. A second die is mounted over the first die. The second die is coupled to the first substrate by the first conductive structure. At least one first support structure formed from a second substrate is provided over the first substrate, adjacent to at least one of the first die and the second die. A top surface of the first support structure is substantially coplanar with a top surface of at least one of the first and second dies adjacent to the first support structure. The stacked structure further includes a heat spreader mounted over the second die.
Public/Granted literature
- US20080083975A1 STACKED STRUCTURES AND METHODS OF FABRICATING STACKED STRUCTURES Public/Granted day:2008-04-10
Information query
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