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US07482616B2 Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same 有权
具有相变存储单元的半导体器件，使用该半导体器件的电子系统及其制造方法

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
Abstract:
In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
Abstract(Chinese):

在一个实施例中，相变存储器件具有防止存储器单元污染或氧化的氧化阻挡层及其制造方法。 在一个实施例中，半导体存储器件包括覆盖半导体衬底的成型层。 模制层具有从其顶表面垂直延伸的突出部分。 该装置还包括与突出部分相邻的相变材料图案和与相变材料图案电连接的下部电极。

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