Invention Grant
US07416980B2 Forming a barrier layer in interconnect joints and structures formed thereby
有权
在互连接头和由此形成的结构中形成阻挡层
- Patent Title: Forming a barrier layer in interconnect joints and structures formed thereby
- Patent Title (中): 在互连接头和由此形成的结构中形成阻挡层
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Application No.: US11078611Application Date: 2005-03-11
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Publication No.: US07416980B2Publication Date: 2008-08-26
- Inventor: Ting Zhong , Valery Dubin , Ming Fang
- Applicant: Ting Zhong , Valery Dubin , Ming Fang
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Intel Corporation
- Agent Kathy J. Ortiz
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a barrier layer on a substrate, wherein the barrier layer comprises molybdenum; and forming a lead free interconnect structure on the barrier layer.
Public/Granted literature
- US20060205234A1 Forming a barrier layer in interconnect joints and structures formed thereby Public/Granted day:2006-09-14
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