发明授权
US07338907B2 Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications
失效
用于FeRAM器件应用的氮化硅和氧化铟薄膜的选择性蚀刻工艺
- 专利标题： Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applications
- 专利标题（中）： 用于FeRAM器件应用的氮化硅和氧化铟薄膜的选择性蚀刻工艺
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申请号： US10958537申请日： 2004-10-04
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公开(公告)号： US07338907B2公开(公告)日： 2008-03-04
- 发明人: Tingkai Li , Sheng Teng Hsu , Bruce D. Ulrich , Mark A. Burgholzer , Ray A. Hill
- 申请人： Tingkai Li , Sheng Teng Hsu , Bruce D. Ulrich , Mark A. Burgholzer , Ray A. Hill
- 申请人地址： US WA Camas
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人地址： US WA Camas
- 代理机构： Sharp Laboratories of America, Inc.
- 代理商 Robert Varitz
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture could increase the etch rate for the silicon nitride while reducing the etch rate for the conductive oxide, resulting in improving etch selectivity. The disclosed selective etch process is well suited for ferroelectric memory device fabrication using conductive oxide/ferroelectric interface having silicon nitride as the encapsulated material for the ferroelectric.
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