Invention Grant
- Patent Title: Memory device having a duty ratio corrector
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Application No.: US11623927Application Date: 2007-01-17
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Publication No.: US07312647B2Publication Date: 2007-12-25
- Inventor: Young Bae Choi , Kwang Jin Na
- Applicant: Young Bae Choi , Kwang Jin Na
- Applicant Address: KR Ichon-Shi
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Ichon-Shi
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR2004-27096 20040420
- Main IPC: H03K3/017
- IPC: H03K3/017

Abstract:
A memory device having a duty ratio corrector which can reduce power consumption by blocking current paths between output terminals and a ground terminal by applying input signals for turning off switching devices for generating an auxiliary voltage for correcting a duty ratio at an initial stage, and which can improve an operational speed by changing the auxiliary voltage from a predetermined voltage, not 0V, to a target voltage.
Public/Granted literature
- US20070109033A1 Memory Device Having a Duty Ratio Corrector Public/Granted day:2007-05-17
Information query
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