发明授权
- 专利标题: Gas barrier substrate and method for manufacturing the same
- 专利标题(中): 阻气性基材及其制造方法
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申请号: US10830460申请日: 2004-04-23
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公开(公告)号: US07291397B2公开(公告)日: 2007-11-06
- 发明人: Toshiyuki Miyadera , Akira Sugimoto , Ayako Yoshida
- 申请人: Toshiyuki Miyadera , Akira Sugimoto , Ayako Yoshida
- 申请人地址: JP Tokyo
- 专利权人: Pioneer Corporation
- 当前专利权人: Pioneer Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2003-121005 20030425
- 主分类号: B32B5/00
- IPC分类号: B32B5/00
摘要:
A gas barrier substrate includes a compound gradient layer. The compound gradient layer includes an inorganic material and a resin material. A content of the inorganic material in the resin material varies in a thickness direction. The gas barrier substrate also includes a gas barrier layer. The gas barrier layer is made of an inorganic material and is bonded to the compound gradient layer. The compound gradient layer has a high content of inorganic material in an area near a bonding surface between the compound gradient layer and the gas barrier layer. The compound gradient layer may be bonded to a resin layer and may have a low content of inorganic material in an area near a surface bonded to the resin layer.
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