Invention Grant
US07220670B2 Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same
失效
通过使用脉冲等离子体化学气相沉积法生产粗多晶硅的方法及其制备的产品
- Patent Title: Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same
- Patent Title (中): 通过使用脉冲等离子体化学气相沉积法生产粗多晶硅的方法及其制备的产品
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Application No.: US10930443Application Date: 2004-08-31
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Publication No.: US07220670B2Publication Date: 2007-05-22
- Inventor: Gurtej S. Sandhu , Trung T. Doan
- Applicant: Gurtej S. Sandhu , Trung T. Doan
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.
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