发明授权
US07196841B2 Lighting system, particularly for use in extreme ultraviolet (EUV) lithography 失效
照明系统,特别适用于极紫外(EUV)光刻

Lighting system, particularly for use in extreme ultraviolet (EUV) lithography
摘要:
A lighting system, particularly for use in extreme ultraviolet (EUV) lithography, comprising a projection lens for producing semiconductor elements for wavelengths ≦193 nm is provided with a light source, an object plane, an exit pupil, a first optical element having first screen elements for producing light channels, and with a second optical element having second screen elements. A screen element of the second optical element is assigned to each light channel that is formed by one of the first screen elements of the first optical element. The screen elements of the first optical element and of the second optical element can be configured or arranged so that they produce, for each light channel, a continuous beam course from the light source up to the object plane. The angles of the first screen elements of the first optical element can be adjusted in order to modify a tilt. The location and/or angles of the second screen elements of the second optical element can be adjusted individually and independently of one another in order to realize another assignment of the first screen elements of the first optical element to the second screen elements of the second optical element by displacing and/or tilting the first and second screen elements.
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