- 专利标题： Semiconductor device and semiconductor device producing system
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申请号： US10330024申请日： 2002-12-27
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公开(公告)号： US07115903B2公开(公告)日： 2006-10-03
- 发明人: Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
- 申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2001-399038 20011228; JP2001-401518 20011228
- 主分类号： H01L31/36
- IPC分类号： H01L31/36 ; H01L21/84
摘要：
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. More specifically, stripe or rectangular depressions and projections are provided in the semiconductor film. Then, continuous-wave laser light is irradiated along the stripe depressions and projections formed in the semiconductor film or in a direction of a major axis or minor axis of the rectangle.
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