Invention Grant
- Patent Title: Self-patterning of photo-active dielectric materials for interconnect isolation
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Application No.: US10697745Application Date: 2003-10-30
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Publication No.: US07012022B2Publication Date: 2006-03-14
- Inventor: Wuping Liu , Bei Chao Zhang , Liang Choo Hsia
- Applicant: Wuping Liu , Bei Chao Zhang , Liang Choo Hsia
- Applicant Address: SG Singapore
- Assignee: Chartered Semiconductor Manufacturing Ltd.
- Current Assignee: Chartered Semiconductor Manufacturing Ltd.
- Current Assignee Address: SG Singapore
- Agent George O. Saile; Rosemary L. S. Pike
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist.
Public/Granted literature
- US20050093158A1 Self-patterning of photo-active dielectric materials for interconnect isolation Public/Granted day:2005-05-05
Information query
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