- 专利标题: Photomask repair method and apparatus
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申请号: US10326112申请日: 2002-12-23
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公开(公告)号: US06991878B2公开(公告)日: 2006-01-31
- 发明人: Shingo Kanamitsu , Takashi Hirano , Fumiaki Shigemitsu , Motosuke Miyoshi , Kazuyoshi Sugihara , Yuichiro Yamazaki , Makoto Sekine , Takayuki Sakai , Ichiro Mori , Katsuya Okumura
- 申请人: Shingo Kanamitsu , Takashi Hirano , Fumiaki Shigemitsu , Motosuke Miyoshi , Kazuyoshi Sugihara , Yuichiro Yamazaki , Makoto Sekine , Takayuki Sakai , Ichiro Mori , Katsuya Okumura
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2001-398182 20011227
- 主分类号: G03F9/00
- IPC分类号: G03F9/00 ; G03C5/00
摘要:
A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.
公开/授权文献
- US20030215722A1 Photomask repair method and apparatus 公开/授权日:2003-11-20
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