发明授权
US06975953B2 Analysis method for semiconductor device, analysis system and a computer program product
失效
半导体器件分析方法，分析系统和计算机程序产品
- 专利标题： Analysis method for semiconductor device, analysis system and a computer program product
- 专利标题（中）： 半导体器件分析方法，分析系统和计算机程序产品
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申请号： US10784939申请日： 2004-02-25
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公开(公告)号： US06975953B2公开(公告)日： 2005-12-13
- 发明人: Kenichi Kadota
- 申请人： Kenichi Kadota
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JPP2003-048090 20030225
- 主分类号： G01R31/00
- IPC分类号： G01R31/00 ; G06F11/30 ; G11C7/00 ; H01L21/66 ; H01L23/544
摘要：
An analysis method for a semiconductor device includes measuring electrical characteristics of TEGs fabricated on a semiconductor substrate; classifying the TEGs into a first TEG category where a systematic failure has not occurred and a second TEG category where the systematic failure has occurred based on the electrical characteristics; creating a first comparison Mahalanobis reference space using first parameters of the TEGs in the first TEG category from among parameters of the TEGs expressed as numerical values; calculating a first comparison Mahalanobis distance of the first parameters and a second comparison Mahalanobis distance of second parameters of the TEGs in the second TEG category by using the first comparison Mahalanobis reference space; and comparing the first and second comparison Mahalanobis distances.
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