发明授权
- 专利标题： Low-K gate spacers by fluorine implantation
- 专利标题（中）： 通过氟注入的低K栅间隔
-
申请号： US10345344申请日： 2003-01-15
-
公开(公告)号： US06720213B1公开(公告)日： 2004-04-13
- 发明人: Jeffrey P. Gambino , Jack Mandelman , William R. Tonti
- 申请人： Jeffrey P. Gambino , Jack Mandelman , William R. Tonti
- 主分类号： H01L21338
- IPC分类号： H01L21338
摘要：
A MOSFET device and a method of fabricating a MOSFET device having low-K dielectric oxide gate sidewall spacers produced by fluorine implantation. The present invention implants fluorine into the gate oxide sidewall spacers which is used to alter the properties of advanced composite gate dielectrics e.g. nitridized oxides, NO, and gate sidewall dielectrics, such that the low-K properties of fluorine are used to develop low parasitic capacitance MOSFETs.
信息查询
