- 专利标题: Polymer, resist composition and patterning process
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申请号: US09986274申请日: 2001-11-08
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公开(公告)号: US06660448B2公开(公告)日: 2003-12-09
- 发明人: Seiichiro Tachibana , Mutsuo Nakashima , Tsunehiro Nishi , Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe , Jun Hatakeyama
- 申请人: Seiichiro Tachibana , Mutsuo Nakashima , Tsunehiro Nishi , Takeshi Kinsho , Koji Hasegawa , Takeru Watanabe , Jun Hatakeyama
- 优先权: JP2000-343324 20001110
- 主分类号: C08F2400
- IPC分类号: C08F2400
摘要:
The invention provides a polymer comprising recurring units containing bridged aliphatic rings in the backbone and having a hydroxyl, acyloxy or alkoxylcarbonyloxy group as well as a lactone structure bonded through a spacer, the polymer having a weight average molecular weight of 1,000-500,000. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.
公开/授权文献
- US20020091215A1 Polymer, resist composition and patterning process 公开/授权日:2002-07-11
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